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High-Temperature Continuous-Wave Operation of GaInAsN–GaAs Quantum-Dot Laser Diodes Beyond 1.3 μm

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4 Author(s)
Fischer, M. ; Nanosyst. & Technol. GmbH, Gerbrunn ; Bisping, D. ; Marquardt, B. ; Forchel, A.

Internal laser parameters and characteristic temperature T0 of a GaInAsN-GaAs quantum-dot (QD) laser emitting above 1350 nm were determined. Continuous-wave operation of GaInAsN-GaAs QD ridge waveguide laser diodes with an emission wavelength of 1355 nm at room temperature (RT) is reported for the first time. Low threshold currents of 16 mA are achieved at RT. Ground state laser emission is observed up to temperatures of 75degC with a resulting laser emission wavelength of 1395 nm.

Published in:

Photonics Technology Letters, IEEE  (Volume:19 ,  Issue: 14 )