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CW operation at - 10°C for InGaAlP visible light laser diodes grown by MOCVD

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5 Author(s)
Ishikawa, M. ; Toshiba Corporation, Research & Development Center, Kawasaki, Japan ; Ohba, Y. ; Sugawara, H. ; Yamamoto, M.
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CW operation at - 10°C for InGaP/InGaAlP double heterostructure (DH) laser diodes has been achieved for the first time. The DH wafers were grown by low-pressure metalorganic chemical vapour deposition using methyl metalorganics as the source of group III elements. Under room-temperature pulsed operation, the lasing wavelength was 663 nm and the lowest threshold current density was 7.8 kA/cm2. The CW characteristic temperature T0 was 63 K at around -30°C.

Published in:

Electronics Letters  (Volume:21 ,  Issue: 23 )

Date of Publication:

November 7 1985

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