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Cryogenic operation of pseudomorphic AlGaAs/InGaAs single-quantum-well MODFETs

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5 Author(s)
Masselink, W.T. ; University of Illinois at Urbana-Champaign, Coordinated Science Laboratory, Urbana, USA ; Ketterson, A. ; Klem, J. ; Kopp, W.
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We have investigated the 77 K operation of AlGaAs/InGaAs MODFETs. The structures, grown by MBE, make use of a 200 Å undoped In0.15Ga0.85As quantum well for electron confinement and an Si-doped Al0.15Ga0.85As top barrier. The MODFETs with 1 ¿m gate lengths exhibit extrinsic transconductances of 360 mS/mm and maximum currents of 310 mA/mm at 77 K. The use of a low Al mole fraction AlGaAs/InGaAs heterojunction allows us to avoid the persistent trapping effects encountered in AlGaAs/GaAs MODFETs without sacrificing device performance.

Published in:

Electronics Letters  (Volume:21 ,  Issue: 20 )

Date of Publication:

September 26 1985

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