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Browse Journals & Magazines > Electronics Letters ...> Volume:21 Issue:19 Help

Planar monolithic integration of a Schottky photodiode and a GaAs field-effect transistor for 0.8 μm-wavelength applications

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5 Author(s)
Verriele, H. ; Université des Sciences et Techniques de Lille, Centre Hyperfréquences et Semiconducteurs, LA CNRS 287, Villeneuve d'Ascq, France ; Maricot, S. ; Constant, M. ; Ramdani, J.
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A planar monolithic integrated photoreceiver suitable for 0.8 μm-wavelength optical communication systems has been realised. It consists of a GaAs Schottky photodiode associated with a GaAs FET. Sensitivities, response times and noise properties of the integrated circuit have been measured and are explained, taking into account various effects such as doping level, thickness of the depletion region and capacitance of the diode.

Published in:
Electronics Letters  (Volume:21 ,  Issue: 19 )

Date of Publication: September 12 1985

Page(s):
878 - 879
ISSN :
0013-5194
Digital Object Identifier :
10.1049/el:19850620
Product Type:
Journals & Magazines
Date of Current Version :
11 July 2007
Issue Date :
September 12 1985
Sponsored by :
Institution of Engineering and Technology

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