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Planar monolithic integration of a Schottky photodiode and a GaAs field-effect transistor for 0.8 μm-wavelength applications

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5 Author(s)
H. Verriele ; Université des Sciences et Techniques de Lille, Centre Hyperfréquences et Semiconducteurs, LA CNRS 287, Villeneuve d'Ascq, France ; S. Maricot ; M. Constant ; J. Ramdani
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A planar monolithic integrated photoreceiver suitable for 0.8 μm-wavelength optical communication systems has been realised. It consists of a GaAs Schottky photodiode associated with a GaAs FET. Sensitivities, response times and noise properties of the integrated circuit have been measured and are explained, taking into account various effects such as doping level, thickness of the depletion region and capacitance of the diode.

Published in:

Electronics Letters  (Volume:21 ,  Issue: 19 )