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Intrinsic lineshape and FM response of modulated semiconductor lasers

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3 Author(s)
E. Eichen ; GTE Laboratories, Incorporated, Waltham, USA ; P. Melman ; W. H. Nelson

A new method for measuring the FM response and the intrinsic linewidth of modulated semiconductor lasers is reported. No additional stochastic line broadening has been observed for direct modulation of buried-heterostructure 1.3 ¿m lasers with modulation depths of less than 20%. Thus FSK systems employing heterodyne detection are expected not to exhibit any additional phase noise penalty due to direct current modulation.

Published in:

Electronics Letters  (Volume:21 ,  Issue: 19 )