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Browse Journals & Magazines > Electronics Letters ...> Volume:21 Issue:18 Help

Use of transparent indium tin oxide to form a highly efficient 20 GHz Schottky barrier photodiode

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1 Author(s)
Parker, D.G. ; GEC Research Limited, Hirst Research Centre, Wembley, UK

The letter discusses the development and characterisation of a GaAs Schottky barrier photodiode based on transparent conducting indium tin oxide (ITO). The use of ITO results in external quantum efficiencies of 60% at 830 nm. The devices have been measured to have a FWHM impulse response of ~20 ps and a ¿3 dBm bandwidth in excess of 20 GHz.

Published in:
Electronics Letters  (Volume:21 ,  Issue: 18 )

Date of Publication: August 29 1985

ISSN :
0013-5194
Digital Object Identifier :
10.1049/el:19850548
Product Type:
Journals & Magazines
Date of Current Version :
11 July 2007
Issue Date :
August 29 1985
Sponsored by :
Institution of Engineering and Technology

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