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The letter discusses the development and characterisation of a GaAs Schottky barrier photodiode based on transparent conducting indium tin oxide (ITO). The use of ITO results in external quantum efficiencies of 60% at 830 nm. The devices have been measured to have a FWHM impulse response of ~20 ps and a Â¿3 dBm bandwidth in excess of 20 GHz.
Date of Publication: August 29 1985