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Novel technique for measurement of MOSFET threshold voltage at very low channel currents

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1 Author(s)
Holmes, G.C. ; British Telecom Research Laboratories, Ipswich, UK

A curve tracer reveals a low-level current `spike¿ in the gate-source characteristic of enhancement-mode MOSFETs. The origin of this spike is explained, and its use in measuring the threshold voltage of any MOSFET at a vanishingly small channel current is described. The technique also identifies whether the MOSFET is n-channel or p-channel, enhancement-mode or depletion-mode.

Published in:

Electronics Letters  (Volume:21 ,  Issue: 12 )