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Low-temperature epitaxial growth of GaAs on (100) silicon substrates

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3 Author(s)
Christou, A. ; Naval Research Laboratory, Washington, USA ; Wilkins, B.R. ; Tseng, W.F.

MBE growth of GaAs on (100) silicon has been achieved at low substrate temperatures with and without an initial desorption of the silicon surface. An arsenic overpressure (5 × 10 ¿8 torr) is necessary for epitaxial growth. The films grown were intrinsic and were twinned in the [110] direction.

Published in:

Electronics Letters  (Volume:21 ,  Issue: 9 )