Referenced Items are not available for this document.
MBE growth of GaAs on (100) silicon has been achieved at low substrate temperatures with and without an initial desorption of the silicon surface. An arsenic overpressure (5 à 10 ¿8 torr) is necessary for epitaxial growth. The films grown were intrinsic and were twinned in the [110] direction.
Published in:
Electronics Letters
(Volume:21
,
Issue:
9
)
Date of Publication: April 25 1985
- Page(s):
- 406 - 408
- ISSN :
- 0013-5194
- Digital Object Identifier :
- 10.1049/el:19850289
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 11 July 2007
- Issue Date :
- April 25 1985
- Sponsored by :
- Institution of Engineering and Technology
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