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Surface electrical breakdown and leakage current on semi-insulating InP

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3 Author(s)
T. Kitagawa ; Hokkaido University, Department of Electrical Engineering, Faculty of Engineering, Sapporo, Japan ; H. Hasegawa ; H. Ohno

Surface electrical breakdown on a semi-insulating InP substrate is investigated. The surface is bare or passivated with anodic oxide, SiO2 or Si3N4 The observed breakdown voltage is about one order of magnitude higher than that of semi-insulating GaAs. The leakage current is sensitive to passivation processes and a thin anodic oxide gives the lowest leakage.

Published in:

Electronics Letters  (Volume:21 ,  Issue: 7 )