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11 ps ring oscillators with submicrometre selectively doped heterostructure transistors

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5 Author(s)
Shah, N.J. ; AT&T Bell Laboratories, Murray Hill, USA ; Pei, S.S. ; Tu, C.W. ; Hendel, R.H.
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Selectively doped AlGaAs/GaAs heterostructure transistor (SDHT) ring oscillators with submicrometre gates have been fabricated using electron beam lithography. Minimum propagation delay of 11.0 ps/gate at 77 K was measured on a 0.4 ¿m gate-length ring oscillator with a power-delay product of 15 fJ at 1.1 V bias. The processing of these structures is described, as well as the testing of the submicrometre transistors and circuits at 300 K and 77 K.

Published in:

Electronics Letters  (Volume:21 ,  Issue: 4 )

Date of Publication:

February 14 1985

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