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Effects of growth temperature and [PH3]/[In(C2H5)3] on purity of epitaxial InP grown by metalorganic chemical vapour deposition

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3 Author(s)
Uwai, K. ; NTT, Musashino Electrical Communication Laboratory, Musashino, Japan ; Mikami, O. ; Susa, N.

High-purity undoped InP epitaxial layers (ND ¿ NA = 5 × 1014 cm¿3, ¿77¿105 cm2/Vs) are grown by low-pressure metalorganic chemical vapour deposition. The carrier concentrations decrease and the electron mobilities increase as the growth temperature decreases from 700°C to 575°C and the mole fraction ratios ([PH3]/[In(C2H5)3]) increase from 29 to 290.

Published in:

Electronics Letters  (Volume:21 ,  Issue: 4 )

Date of Publication:

February 14 1985

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