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Comparative reliability study of GaAs power MESFETs: mechanisms for surface-induced degradation and a reliable solution

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4 Author(s)
Dumas, J.M. ; CNET, LAB/ICM, Lannion, France ; Lecrosnier, D. ; Paugam, J. ; Vuchener, C.

A gradual degradation has been observed in the RF performance of GaAs power FETs. Electrical and physical analyses have been carried out, indicating the role played by the surface. A plasma enhanced chemical vapour deposited silicon nitride film is established as a suitable surface passivation.

Published in:

Electronics Letters  (Volume:21 ,  Issue: 3 )