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Hot-electron noise limitations in submillimetre-wave Schottky-barrier mixer diodes

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1 Author(s)
Keen, N.J. ; Max-Planck-Institut fÿr Radioastronomie, Bonn, West Germany

The noise from small-area platinum gallium-arsenide Schottky-barrier mixer diodes has been measured at 4 GHz, to compare high-field (hot-electron) noise in diodes with different doping densities and anode areas. In the present state of technology, submillmmetre-wavelength mixer diodes should be fabricated from gallium arsenide with a doping density of about 1017 cm¿3.

Published in:

Electronics Letters  (Volume:21 ,  Issue: 1 )

Date of Publication:

January 3 1985

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