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An AlGaAs/GaAs PIN photodiode and a GaAs transimpedance amplifier including six FETs have been monolithically integrated on a GaAs substrate. A photoreceiver operation exhibiting an excellent linearity has been demonstrated. The photodiode sensitivity of 0.44 A/W and the amplifier transimpedance of 1.0 Ã l04 V/A have been determined from the measurement.
Date of Publication: November 24 1983