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Browse Journals & Magazines > Electronics Letters ...> Volume:19 Issue:24 Help

Monolithic PIN/preamplifier circuit integrated on a GaAs substrate

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8 Author(s)
Wada, O. ; Fujitsu Ltd., Atsugi, Japan ; Hamaguchi, H. ; Miura, S. ; Makiuchi, M.
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An AlGaAs/GaAs PIN photodiode and a GaAs transimpedance amplifier including six FETs have been monolithically integrated on a GaAs substrate. A photoreceiver operation exhibiting an excellent linearity has been demonstrated. The photodiode sensitivity of 0.44 A/W and the amplifier transimpedance of 1.0 × l04 V/A have been determined from the measurement.

Published in:
Electronics Letters  (Volume:19 ,  Issue: 24 )

Date of Publication: November 24 1983

Page(s):
1031 - 1032
ISSN :
0013-5194
Digital Object Identifier :
10.1049/el:19830699
Product Type:
Journals & Magazines
Date of Current Version :
11 July 2007
Issue Date :
November 24 1983
Sponsored by :
Institution of Engineering and Technology

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