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The design and fabrication of a novel air-bridged, low-parasitic Mott diode is described. The devices were fabricated on epitaxial layers grown by MBE on SI undoped LEC substrates. Measurements on the diode at DC and RF showed that the zero bias capacitance was 0.025 pF, the parasitic capacitance 0.007 pF and the series resistance was approximately 10 Â¿. Diode pairs were incorporated into monolithic single balanced mixers which exhibited a conversion loss of 6 dB at 30 GHz with a 1 GHz IF.