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50 nm line fabrication in 0.5 ¿m PMMA film on silicon substrates with a 20 kV e-beam

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2 Author(s)
Yamashita, H. ; Matsushita Electronics Corporation, Semiconductor R&D Center, Nagaokakyo, Japan ; Todokoro, Y.

With an isopropyl alcohol (IPA) development, 50¿100 nm lines are fabricated in 0.5 ¿m PMMA film on silicon substrates with a 20 kV e-beam. The slope of solubility rate in an IPA development is 10.2 at a high electron dose. A higher contrast and an improved resolution are obtained by using an IPA development.

Published in:

Electronics Letters  (Volume:21 ,  Issue: 15 )