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Numerical analysis of MOS transistor effective channel width

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3 Author(s)
Asenov, A.M. ; Institute of Microelectronics, Sofia, Bulgaria ; Stefanov, E.N. ; Antov, B.Z.

The effect of modulation of the effective width of a narrow-channel MOST by the gate voltage is demonstrated using a two-dimensional integral MOS process and device similator. The realistic shapes of the `bird's beak¿ and doping concentrations allow a numerical analysis of this effect to be made for typical enhancement- and depletion-mode devices, as well as a comparison with the experiment.

Published in:

Electronics Letters  (Volume:21 ,  Issue: 14 )