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Effects of doping levels at source and drain regions on the performance of a-Si FET

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3 Author(s)
K. Katoh ; Stanley Electric Co., Research & Development Laboratory, Yokohama, Japan ; S. Imagi ; H. Watanabe

The transfer characteristics of a-Si FETs are remarkably improved by adopting the phosphorus doped n+-layer at the source and drain contacts. Excess doping of phosphorus, however, causes degradation in the transfer characteristics after heat treatment. The optimum doping level is obtained by depositing the n+-layer at 1 to 5×10¿3 molar ratios of PH3/SiH4.

Published in:

Electronics Letters  (Volume:20 ,  Issue: 25 )