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Selectively doped n+ InP/n¿ GaInAs heterostructure prepared using chloride transport vapour-phase epitaxy

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3 Author(s)
Takikawa, M. ; Fujitsu Laboratories Ltd., Atsugi, Japan ; Komeno, J. ; Ozeki, M.

A field-effect transistor with a 2 ¿m Au gate was fabricated on a selectively doped InP/GaInAs heterostructure grown using chloride transport vapour-phase epitaxy. Complete pinch-off was observed, and transconductance of 90 and 160 mS/mm were measured at 295 and 77 K, respectively. From analysis of the drain I/V characteristic, two-dimensional electron gas at the interface was revealed to be the dominant factor for the channel current. This is the first report of a successful preparation of an n+ InP/n¿ GaInAs heterostructure for the selectively doped field-effect transistor.

Published in:

Electronics Letters  (Volume:20 ,  Issue: 7 )