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CMOS circuits made in lamp-recrystallised silicon-on-insulator

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5 Author(s)

Polysilicon film was deposited on 100 mm oxidised silicon wafers. The film was recrystallised using a focused halogen lamp and served as substrate material for CMOS circuit fabrication. A mobility of 480 and 180 cm2/V s is found in N- and P-channel MOS transistors, respectively, and the threshold voltage spread is very low. 65-stage ring oscillators were also realised, which exhibit a 6 ns delay per stage at 5 V supply voltage.

Published in:

Electronics Letters  (Volume:20 ,  Issue: 7 )