Skip to Main Content
Polysilicon film was deposited on 100 mm oxidised silicon wafers. The film was recrystallised using a focused halogen lamp and served as substrate material for CMOS circuit fabrication. A mobility of 480 and 180 cm2/V s is found in N- and P-channel MOS transistors, respectively, and the threshold voltage spread is very low. 65-stage ring oscillators were also realised, which exhibit a 6 ns delay per stage at 5 V supply voltage.