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High-efficiency Q-band GaAs FET oscillator

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2 Author(s)
H. Q. Tserng ; Texas Instruments Incorporated, Dallas, USA ; B. Kim

A microstrip GaAs FET oscillator using a 75 × 0.25 ¿m device has achieved an output power of 10 mW with an efficiency of 10% at 36 GHz. This oscillator was intended for local-oscillator applications at Q-band.

Published in:

Electronics Letters  (Volume:20 ,  Issue: 7 )