Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

0.5 W 2-21 GHz monolithic GaAs distributed amplifier

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Kim, B. ; Texas Instruments Incorporated, Central Research Laboratories, Dallas, USA ; Tserng, H.Q.

A novel circuit concept to reduce the gate loss using series capacitors on the gate feeding lines has been implemented for a distributed amplifier design. It has significantly increased the gate width of an amplifier with a resultant increase of the broadband output power and efficiency. A monolithic GaAs distributed amplifier using 6 × 300 μm FETs has achieved a record output power of 0.5 W over the 2 to 21 GHz frequency band with at least 4 dB gain. The poweradded efficiency was 14%. The linear gain was 5 + 1 dB over the same frequency band.

Published in:

Electronics Letters  (Volume:20 ,  Issue: 7 )