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Noise and dynamical gain studies of GaAs photoconductive detectors

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4 Author(s)
Vilcot, J.P. ; Université des Sciences et Techniques de Lille, Centre Hyperfréquences et Semiconducteurs, LA CNRS 287, Villeneuve d'Ascq, France ; Decoster, D. ; Raczy, L. ; Constant, M.

Noise measurements on N-type GaAs planar photoconductive detectors have been made over the 10 MHz¿1.5 GHz frequency range. The dynamical gains of the devices were calculated from noise data and compared with the values obtained using picosecond measurements. In the gigahertz frequency domain, the photodetectors have an internal current gain as observed in the avalanche photodiodes, but no excess noise factor has been found.

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Electronics Letters  (Volume:20 ,  Issue: 7 )