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Gbit/s modulation of heavily Zn-doped surface-emitting InGaAsP/InP DH LED

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6 Author(s)
Suzuki, A. ; NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan ; Inomoto, Y. ; Hayashi, J. ; Isoda, Y.
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Pulse-response characteristics for a heavily zinc-doped surface-emitting InGaAsP/InP DH LED have been studied. 1.6 Gbit/s NRZ modulation has been achieved, and the feasibility of using the surface-emitting LED in a Gbit/s transmission system has been studied.

Published in:

Electronics Letters  (Volume:20 ,  Issue: 7 )

Date of Publication:

March 29 1984

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