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Room-temperature pulsed operation of GaxIn1¿xAsyP1¿y/Gax'In1¿x'Asy'P1¿y' DH visible injection laser grown on (100) GaAs by a two-phase-solution technique

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3 Author(s)
H. Kawanishi ; Kogakuin University, Department of Electronic Engineering, Tokyo, Japan ; T. Aota ; T. Iwakami

Room-temperature pulsed operation of a GaxIn1¿xAsyP1¿y/Gax'In1¿x'Asy'P1¿y' double-heterostructure visible injection laser diode is reported. The laser diode is grown by liquid-phase epitaxy on (100) GaAs, and the active layer is grown by a two-phase-solution technique. The threshold current density is 16 kA/cm2 for the laser diode lasing at about 721 nm at room temperature.

Published in:

Electronics Letters  (Volume:20 ,  Issue: 6 )