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Influence of degeneracy on behaviour of homojunction GaAs bipolar transistor

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3 Author(s)
Bailbe, J.P. ; Centre National de la Recherche Scientifique, Laboratoire d'Automatique et d'Analyse des Systemes, Toulouse, France ; Marty, A. ; Rey, G.

In the letter the beneficial influence of degeneracy mechanisms on the electrical properties of a homojunction bipolar transistor has been highlighted.

Published in:

Electronics Letters  (Volume:20 ,  Issue: 6 )