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Processing of InP MIS devices monitored via photoluminescence measurements

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5 Author(s)
S. Krawczyk ; Ecole Centrale de Lyon, Laboratoire d'Electronique, Automatique et Mesures Electriques, ERA (CNRS) 661 `Génie Electronique¿, Ecully, France ; B. Bailly ; B. Sautreuil ; R. Blanchet
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A remarkable one-to-one correlation is observed between photoluminescence (PL) intensity and surface state density in the upper part of the gap of n-type InP. Measurement of the PL intensity is shown to be a simple and efficient method for monitoring each individual technological step of fabrication of MIS devices on InP.

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Electronics Letters  (Volume:20 ,  Issue: 6 )