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Highly efficient single-longitudinal-mode operation of antireflection-coated 1.3 ¿m DFB-DC-PBH LD

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5 Author(s)
Yamaguchi, M. ; NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan ; Kitamura, M. ; Mito, I. ; Murata, S.
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Lasing characteristics for a 1.3 ¿m InGaAsP/InP distributed-feedback double-channel planar buried-heterostructure laser diode (DFB-DC-PBH LD) have been remarkably improved by antireflection (AR) coating applied on the front facet. CW single-longitudinal-mode (SLM) operation power as high as 55 mW, and differential quantum efficiency as high as 36%, have been obtained from the coated front facet. CW SLM operation has been achieved up to 105°C.

Published in:

Electronics Letters  (Volume:20 ,  Issue: 6 )