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Boundary element method for calculation of depletion layer profiles

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2 Author(s)
F. Cuypers ; Ghent State University, Laboratory of Electronics, Gent, Belgium ; G. de Mey

A numerical method is presented to calculate the two-dimensional potential distribution in a semiconductor according to the abrupt depletion approximation. The technique is based on the boundary element method, and the shape of the depletion region is determined iteratively.

Published in:

Electronics Letters  (Volume:20 ,  Issue: 6 )