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Modelling and analysis of dual-gate MESFET mixers

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2 Author(s)
H. Ashoka ; University of Queensland, Department of Electrical Engineering, Brisbane, Australia ; R. S. Tucker

A method is presented for the modelling and analysis of dual-gate MESFET mixers. The method can handle all the dominant nonlinear mixing processes, and is valid for arbitrary DC-bias conditions. Good agreement between theory and experiment is demonstrated.

Published in:

Electronics Letters  (Volume:20 ,  Issue: 5 )