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Monolayer heterointerfaces and thin layers (~10 Å) in AlxGa1¿xAs-GaAs superlattices grown by metalorganic chemical vapour deposition

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5 Author(s)
Brown, J.M. ; University of Illinois at Urbana-Champaign, Electrical Engineering Research Laboratory and Materials Research Laboratory, Urbana, USA ; Holonyak, N. ; Ludowise, M.J. ; Dietze, W.T.
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Transmission electron microscopy (TEM) and lattice fringe images are used to show that metalorganic chemical vapour deposition (MOCVD) is capable of growing highly uniform AlxGa1¿xAs-GaAs quantum-well heterostructures (QWHs) and superlattices (SLs) with monolayer heterointerfaces and layers as thin as ~10 Å.

Published in:

Electronics Letters  (Volume:20 ,  Issue: 5 )