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InGaAs pin photodiode fabricated on semi-insulating InP substrate for monolithic integration

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3 Author(s)
K. Li ; TRW, Electro-Optics Research Center, El Segundo, USA ; E. Rezek ; H. D. Law

A low-dark-current high-speed InGaAs PIN photodiode suitable for optoelectronic monolithic integration has been fabricated by LPE method on semi-insulating InP substrate. The photodiode has the lowest reported dark-current density of 2.5 × 10¿6 A/cm2 at ¿10 V in this material system. At the operating voltage of ¿5 V, an external quantum efficiency of >90% at 1.3 ¿m and >83% at 1.55 ¿m, a rise time of <35 ps and an FWHM of <45 ps have been measured.

Published in:

Electronics Letters  (Volume:20 ,  Issue: 5 )