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Applications of dual-gate GaAs m.e.s.f.e.t.s for fast pulse shape regeneration systems

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3 Author(s)
W. Filensky ; Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany ; F. Ponse ; H. Beneking

The suitability of dual-gate GaAs m.e.s.f.e.t.s for pulse shape reconstruction in the Gbit/s range is presented. The properties of these f.e.t.s and the circuitry for reduction of pulse width and pulse slope are both described. The variation of the input/output pulse-width ratio and the time behaviour for fast pulses are shown.

Published in:

Electronics Letters  (Volume:16 ,  Issue: 6 )