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10 GHz/10 W internally matched flip-chip GaAs power f.e.t.s

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6 Author(s)
Mitsui, Y. ; Mitsubishi Electric Corporation, Semiconductor Laboratory, Itami, Japan ; Kobiki, M. ; Wataze, M. ; Segawa, K.
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A flip-chip GaAs power f.e.t. delivering 10 W power output with 3 dB gain has been realised at 10 GHz by using a newly developed internal matching technique, in which the f.e.t. chips are directly connected to the lumped capacitors in the matching networks.

Published in:

Electronics Letters  (Volume:16 ,  Issue: 6 )