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The electrical properties of Schottky-barrier and Langmuir-film m.i.s. solar cells fabricated on chemically etched CdTe substrates are reported. The Schottky-barrier devices possess ideality factors close to unity and barrier heights of approximately 0.70 eV. Incorporation of one monolayer of a cadmium stearate Langmuir film between the metal electrode and the semiconductor is found to increase both the effective barrier height of the device measured in the dark and also the open-circuit voltage measured under illumination conditions.