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Design of a temperature stable surface-acoustic-wave device on silicon

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2 Author(s)
Cambon, G. ; USTF Place E. Bataillon, Centre d'Etudes d'Electronique des Solides, Montpellier, France ; Attal, J.

We show that the SiO2/Si is a suitable surface-acoustic-wave structure for integrated oscillators. By adjusting the thickness of the SiO2, layer we can annul the first-order temperature coefficient of the phase delay. In this case the second-order temperature coefficient of frequency is equal to ¿4.5×10¿8/(°C)2 and it is close to that of the quartz ST-X.

Published in:

Electronics Letters  (Volume:14 ,  Issue: 17 )