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We show that the SiO2/Si is a suitable surface-acoustic-wave structure for integrated oscillators. By adjusting the thickness of the SiO2, layer we can annul the first-order temperature coefficient of the phase delay. In this case the second-order temperature coefficient of frequency is equal to Â¿4.5Ã10Â¿8/(Â°C)2 and it is close to that of the quartz ST-X.
Date of Publication: August 17 1978