We show that the SiO2/Si is a suitable surface-acoustic-wave structure for integrated oscillators. By adjusting the thickness of the SiO2, layer we can annul the first-order temperature coefficient of the phase delay. In this case the second-order temperature coefficient of frequency is equal to ¿4.5Ã10¿8/(°C)2 and it is close to that of the quartz ST-X.
Published in:
Electronics Letters
(Volume:14
,
Issue:
17
)
Date of Publication: August 17 1978