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Liquid-nitrogen-cooled submillimetre-wave silicon IMPATT diodes

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4 Author(s)
Ishibashi, T. ; NTT, Electrical Communication Laboratories, Musashino, Japan ; Ino, M. ; Makimura, T. ; Ohmori, M.

400 and 300 GHz c.w. oscillation characteristics for liquid-nitrogcn-cooled silicon IMPATT diodes are described. Output powers of 2.2 and 4.5 mW have been obtained at 412 and 295 GHz, respectively, and a highest oscillation frequency of 430 GHz observed.

Published in:

Electronics Letters  (Volume:13 ,  Issue: 10 )