By Topic

Low-resistance submicrometre gates used for self alignment

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
K. Ismail ; Technical University of Aachen, Institute of Semiconductor Electronics, Aachen, West Germany ; H. Beneking

A novel gate fabrication technique useful for MESFETs is presented. The gates have submicrometre dimensions with an extremely low ohmic resistance and are used for self alignment. Simple optical projection lithography and electroplating techniques are needed. The resulting gates have proved to be mechanically strong.

Published in:

Electronics Letters  (Volume:20 ,  Issue: 22 )