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Improving performance of AlGaAs/GaAs monolithic laser/FET by GRIN-SCH quantum-well laser

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6 Author(s)
Wada, O. ; Fujitsu Laboratories Ltd., Atsugi, Japan ; Yamakoshi, S. ; Sanada, T. ; Fujii, T.
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An AlGaAs/GaAs graded-index-waveguide separate-confinement-heterostructure (GRIN-SCH) single-quantum-well (SQW) laser has been monolithically integrated with a couple of field-effect-transistor drivers on a semi-insulating GaAs substrate. The adoption of the GRIN-SCH SQW laser has enabled an improvement in the laser/FET performance, exhibiting a low laser threshold current (12 mA) and a high sensitivity of the output light power to the input gate voltage (7.5 mW/facet/V).

Published in:

Electronics Letters  (Volume:20 ,  Issue: 22 )