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Browse Journals & Magazines > Electronics Letters ...> Volume:20 Issue:19 Help

Crescent InGaAsP mesa substrate buried-heterostructure lasers at 1.55 μm

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3 Author(s)
Feldman, R.D. ; AT&T Bell Laboratories, Holmdel, USA ; Austin, R.F. ; Oron, M.

Lasers with an inverted buried-crescent active layer have been grown over mesa substrates in a single liquid-phase-epitaxial growth step. Threshold currents are 50-70 mA. High output power, with linear light/current characteristics up to 18 mW, is seen. The temperature dependence is characterised by T0 = 70°C, which is higher than normally seen in 1.55 μm lasers.

Published in:
Electronics Letters  (Volume:20 ,  Issue: 19 )

Date of Publication: September 13 1984

Page(s):
795 - 796
ISSN :
0013-5194
Digital Object Identifier :
10.1049/el:19840541
Product Type:
Journals & Magazines
Date of Current Version :
11 July 2007
Issue Date :
September 13 1984
Sponsored by :
Institution of Engineering and Technology

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