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Lasers with an inverted buried-crescent active layer have been grown over mesa substrates in a single liquid-phase-epitaxial growth step. Threshold currents are 50-70 mA. High output power, with linear light/current characteristics up to 18 mW, is seen. The temperature dependence is characterised by T0 = 70°C, which is higher than normally seen in 1.55 μm lasers.
Date of Publication: September 13 1984