Cart (Loading....) | Create Account
Close category search window

Nonlinearity in GaAs FET power amplifying devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Cheng, T.C. ; Bell-Northern Research, Ottawa, Canada ; Shurmer, H.V.

Modern microwave communication systems rely heavily on the linearity of output stages incorporating GaAs FET power amplifying devices. This letter describes a system for the automatic nonlinearity measurement in such devices of gain and phase angle as functions of input power level and frequency, with results leading to significantly improved system performance.

Published in:

Electronics Letters  (Volume:20 ,  Issue: 19 )

Date of Publication:

September 13 1984

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.