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Transverse junction stripe lasers using Si-doped GaAs/AlGaAs grown by MBE

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4 Author(s)
Mitsunaga, K. ; Mitsubishi Electric Corporation, Central Research Laboratory, Amagasaki, Japan ; Fujiwara, K. ; Nunoshita, M. ; Nakayama, T.

Transverse junction stripe (TJS) laser diodes on a semi-insulating substrate have been fabricated using Si-doped GaAs/AlGaAs double-heterostructure layers grown by MBE. Room-temperature CW operation of the TJS laser with a low threshold current (30 mA) has been achieved.

Published in:

Electronics Letters  (Volume:20 ,  Issue: 17 )