Cart (Loading....) | Create Account
Close category search window
 

Silicon-on-insulator CMOS transistors in dual electron beam recrystallised polysilicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Hopper, G.F. ; GEC Research Laboratories, Hirst Research Centre, Wembley, UK ; Davis, J.R. ; McMahon, R.A. ; Ahmed, H.

Discrete MOS transistors and CMOS test circuits have been fabricated on silicon-on-insulator substrates prepared by recrystallisation of polysilicon on silicon dioxide by the dual electron beam technique. Channel mobilities in seeded material are found to be equal to those obtained in bulk silicon devices. In unseeded material hole mobility remains the same, but electron mobility is lower.

Published in:

Electronics Letters  (Volume:20 ,  Issue: 12 )

Date of Publication:

June 7 1984

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.