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Low resistance alloyed ohmic contacts to Al0.48In0.52As/n+-Ga0.47In0.53As

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7 Author(s)
Capani, P.M. ; Cornell University, School of Electrical Engineering and National Research & Resource Facility for Submicron Structures, Ithaca, USA ; Mukherjee, S.D. ; Zwicknagl, P. ; Berry, J.D.
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A low ohmic contact resistance metallurgy and associated alloy cycles have been developed for applications to Al0.48In0.52As/Ga0.47In0.53As MODFETs (HEMTs). The metallurgy involves sequentially evaporated Ni/Ge/Au/Ag/Au layers followed by transient thermal alloy cycles. This resulted in low transfer resistances ~0.06 ¿mm to the underlying GalnAs layer for alloying temperatures to ~480°C.

Published in:

Electronics Letters  (Volume:20 ,  Issue: 11 )