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High-temperature operation of 1.55 μm InGaAsP double-channel buried-heterostructure lasers grown by LPE

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6 Author(s)
Besomi, P. ; AT&T Bell Laboratories, Murray Hill, USA ; Wilson, R.B. ; Brown, R.L. ; Dutta, N.K.
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High-temperature operation of InGaAsP double-channel buried-heterostructure (DCBH) lasers emitting at 1.55 μm is reported. The 1.55 μm InGaAsP DCBH lasers have threshold currents as low as 18 mA at 20°C. The threshold current temperature sensitivity between 10°C and 75°C is characterised by a T0 value of 55-66 K. Electro-optical derivative measurements show that the 1.55 μm InGaAsP DCBH laser does not have substantial above-threshold leakage current for junction temperatures as high as 75°C. Finally, these devices were operated at temperatures as high as 110°C, the highest CW operating temperature obtained to date for a 1.55 μm InGaAsP laser.

Published in:

Electronics Letters  (Volume:20 ,  Issue: 10 )

Date of Publication:

May 10 1984

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