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Low-threshold InGaAsP/InGaP lasers at 810 nm grown on GaAs substrate by LPE

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6 Author(s)
K. Wakao ; Fujitsu Laboratories Ltd., Atsugi, Japan ; H. Nishi ; S. Isozumi ; S. Ohsaka
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InGaAsP/InGaP double-heterostructure lasers emitting at 810 nm have been fabricated on GaAs substrates using liquid-phase epitaxy (LPE). A threshold current as low as 2.0 kA/cm2 with an external differential quantum efficiency of 54% is obtained. Thus it has been shown that high-quality InGaAsP/InGaP lasers can be obtained by LPE growth.

Published in:

Electronics Letters  (Volume:20 ,  Issue: 9 )