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Large-signal capabilities and analysis of distributed amplifiers

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3 Author(s)
Gamand, P. ; Universitéde Lille I, Centre Hyperfréquences et Semiconducteurs, LA CNRS 287, Villeneuve d'Ascq, France ; Crosnier, Y. ; Gelin, P.

In the letter experimental results are presented which show that distributed amplifiers can be used for power applications. These results are verified by comparing an analytic model predicted using SPICE 2 simulation with measurements between 0.3 and 12 GHz. It appears that a very broad band can be achieved and that the distributed amplifiers keep their self matching properties even under large-signal operation. Distributed-amplifier characteristics, under small-signal operations, are now well known.1¿4 However, recent improvements in GaAs FET technology have created new prospects in large-signal and high-frequency conditions. To our knowledge, although some experimental results have been published3, no theoretical study has been carried out for large-signal conditions. The letter provides such a study.

Published in:

Electronics Letters  (Volume:20 ,  Issue: 8 )