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Large-signal capabilities and analysis of distributed amplifiers

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3 Author(s)
P. Gamand ; Universitéde Lille I, Centre Hyperfréquences et Semiconducteurs, LA CNRS 287, Villeneuve d'Ascq, France ; Y. Crosnier ; P. Gelin

In the letter experimental results are presented which show that distributed amplifiers can be used for power applications. These results are verified by comparing an analytic model predicted using SPICE 2 simulation with measurements between 0.3 and 12 GHz. It appears that a very broad band can be achieved and that the distributed amplifiers keep their self matching properties even under large-signal operation. Distributed-amplifier characteristics, under small-signal operations, are now well known.1¿4 However, recent improvements in GaAs FET technology have created new prospects in large-signal and high-frequency conditions. To our knowledge, although some experimental results have been published3, no theoretical study has been carried out for large-signal conditions. The letter provides such a study.

Published in:

Electronics Letters  (Volume:20 ,  Issue: 8 )