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High-transconductance self aligned GaAs MESFET using implantation through an AlN layer

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5 Author(s)
Onodera, H. ; Fujitsu Laboratories Ltd., Atsugi, Japan ; Yokoyama, N. ; Kawata, H. ; Nishi, H.
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Tungsten-silicide-gate self aligned GaAs MESFETs were fabricated on a very thin channel layer formed by implantation through an AlN layer on a semi-insulating GaAs substrate. Transconductance of the through-implanted MESFETs showed a 30 to 50% increase as compared with that of conventional self aligned MESFETs, and reached its maximum value at 300 mS/mm for 1¿m-gate-length FETs.

Published in:

Electronics Letters  (Volume:20 ,  Issue: 1 )

Date of Publication:

January 5 1984

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