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Effects of grain boundary passivation on the characteristics of p-channel MOSFETs in LPCVD polysilicon

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7 Author(s)
Malhi, S.D.S. ; Texas Instruments Incorporated, Semiconductor Process & Design Center and Materials Science Laboratory, Dallas, USA ; Shah, R.R. ; Shichijo, H. ; Pinizzotto, R.F.
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p-channel MOSFETs in LPCVD polysilicon have been built. Grain boundary passivation using a plasma of hydrogen has been explored as a means of improving the device performance. Dramatic enhancement of drive current and curtailment of leakage current have been observed. The devices are well suited for application as load elements in CMOS static RAMs.

Published in:

Electronics Letters  (Volume:19 ,  Issue: 23 )

Date of Publication:

November 10 1983

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