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Behaviour of device structures based on IDT-launched bulk acoustic waves in a parallel-sided plate of lithium niobate

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3 Author(s)
Bloch, P.D. ; University of Oxford, Department of Engineering Science, Oxford, UK ; Doe, N.G. ; Paige, E.G.S.

We present device responses due to fast shear and longitudinal waves, which propagate between a pair of IDTs on an upper surface via a reflection from the lower surface of a parallel-sided plate of 41°-rotated Y-cut lithium niobate. Single-mode response can be obtained by removing unwanted modes using saw cuts in the crystal substrate. Centre-frequency and bandwidth enhancement of a factor of two or more are achievable compared with the SAW response of the same IDTs.

Published in:

Electronics Letters  (Volume:19 ,  Issue: 21 )